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University of Oregon chemists provide a detailed view of traps that disrupt energy flow, possibly pointing toward improved charge-carrying devices George NazinEUGENE, Ore. — Oct. 21, 2014 — Universit...
Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric s...
We present a method of three-dimensional observation of internal defects in semiconductor crystals for blue lasers by use of two-photon process. We excite photoluminescence by using two-photon process...
In the present paper, we discuss the influence of point defects on electrical and optical characteristics of ZnO thin films grown by the atomic layer deposition (ALD) method. The films were grown on g...
Pressure induced microbends have been created in a 50 mm graded index multimode optical fibre with spatial periodicity L = 4.5 mm, embedded in the sample of araldite. If high pressure is applied direc...
Noise spectroscopy is an effective tool to characterize the quality of semiconductor bulk and surface and a figure of merit for device quality as a whole. In certain cases, low-frequency noise can be ...
Recent studies of room-temperature irradiation-induced defects in Ge using space-charge capacitance-transient spectroscopy are reviewed. From these measurements only two defect complexes have been una...
A class of macroscopic, so-called oval defects, which may be found in an epitaxial A3B5 materials grown by molecular beam epitaxy (MBE) technique, is studied in this paper. The investigations were per...
We introduce a general designing procedure that allows us, for any given photonic crystal slab, to create an appropriate line defect structure that possesses single-mode bands with large bandwidth and...

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