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Phase Transition Induced Vertical Alignment of Ultrathin Gallium Phosphide Nanowire Arrays on Silicon by Chemical Beam Epitaxy
Vertical Alignment Ultrathin Gallium Phosphide Nanowire Arrays Silicon Chemical Beam Epitaxy
2016/12/2
CBE and CVD were performed in an ultra-high vacuum (UHV) system. The background pressure was kept at 1 × 10-10 mbar. The Au was deposited by MBE on a hydrogen terminated Si substrate with a surface te...
期刊信息
篇名
Vertical alignment film for liquid crystals fabricated by monomer photocrosslinking
语种
英文
撰写或编译
作者
Li XUAN,Tao YU,Zenghui PENG,Shengping RUAN
第一作者单位
刊物名称
Mol. Cryst. Liq. Cryst
页面
Vol.(404):33...