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2017年碳化硅和相关材料国际会议（International Conference on Silicon Carbide and Related Materials 2017）
2017年 碳化硅和相关材料 国际会议
2017/3/9
The 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) is the premier biennial meeting covering all aspects of the latest SiC research and development. Scientists, en...
Analytical modeling of silicon carbide MESFET
Silicon carbide mathematics software the physical devices analog channel current
2014/12/31
This study concentrates on analytical modeling of silicon carbide MESFET device using MATH Lab software. In this study, an analytical simulation has been proposed to find the characteristics of SIC ME...
专著信息
书名
Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide
语种
英文
撰写或编译
作者
C. H. Lam,T. W. Lam,C. C. Ling,S. Fung,C. D. Beling,Hang De-Sheng and Weng Huimin
第一作者单位
出版社
J.P...
An Analytical Study on the Local Electronic Density of States of the Valence Bands in Amorphous Silicon Carbide
Local valence band density of states amorphous silicon carbide hybrid orbitals
2010/12/9
A formulation for the energy-averaged local valence band density of states of amorphous silicon carbide is derived. To this end, sp3-type hybrid orbitals are employed.